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| Composite Transistors XN09D57 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) For DC-DC converter Features * Two elements incorporated into one package (Tr + SBD) * Reduction of the mounting area and assembly cost by one half * Low collector-emitter saturation voltage VCE(sat) 0.50+0.10 -0.05 0.30+0.10 -0.05 6 5 4 Unit: mm 0.16+0.10 -0.06 1.50+0.25 -0.05 2.8+0.2 -0.3 1 2 3 Basic Part Number * XN9D57 + MA3XD11 (0.95) (0.95) 1.90.1 2.90+0.20 -0.05 Display at No.1 lead 10 1.1+0.2 -0.1 Tr Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current VCBO VCEO VEBO IC ICP VR VRRM IF(AV) IFSM PT Tj Tstg -15 -15 -5 -2.5 -10 20 25 1 2 600 125 -55 to +125 V V V A A V V A A 1 2 1: Emitter 2: Base 3: Anode 0 to 0.1 Parameter Symbol Rating Unit 4: Collector (Cathode) 5: Collector (Cathode) 6: Collector (Cathode) Mini6-G1 Package Marking Symbol: EW Internal Connection 6 5 4 SBD Reverse voltage Repetitive peak reverse voltage Forward current (Average) Non-repetitive peak forward surge current Overall Total power dissipation * Junction temperature Storage temperature mW C C Note) *: Measuring on ceramic substrate at 15 mm x 15 mm x 0.6 mm Electrical Characteristics Ta = 25C 3C * Tr Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio * Collector-emitter saturation voltage * Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) Conditions IC = -10 A, IE = 0 IC = -1 mA, IB = 0 IE = -10 A, IC = 0 VCB = -10 V, IE = 0 VCE = -2 V, IC = -100 mA VCE = -2 V, IC = -2.5 A IC = -1 A, IB = -10 mA IC = -2.5 A, IB = -50 mA 200 100 -140 -270 -320 Min -15 -15 -5 - 0.1 560 Typ Max Unit V V V A mV Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement Publication date: March 2004 SJJ00245CED 1.1+0.3 -0.1 Absolute Maximum Ratings Ta = 25C (0.65) 3 0.40.2 5 1 XN09D57 Electrical Characteristics (continued) Ta = 25C 3C * Tr (continued) Parameter Collector output capacitance (Common base, input open circuited) Transition frequency Turn-on time Storage time Turn-off time Symbol Cob fT ton tstg toff Conditions VCB = -10 V, IE = 0, f = 1 MHz VCB = -10 V, IE = 50 mA, f = 200 MHz Refer to the switching time measurement circuit Min Typ 40 180 35 110 10 Max Unit pF MHz ns ns ns Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Switching time measurement circuit IB2 IB1 RB 470 F VCC = -5 V Output RL Input PW = 20 s DC 1% -20IB1 = 20IB2 = IC = -1.5 A * SBD Parameter Forward voltage Reverse current Terminal capacitance Symbol VF IR Ct IF = 1 A VR = 20 V VR = 0, f = 1 MHz 100 Conditions Min Typ Max 0.45 200 Unit V A pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for diodes. 2. Schottky barrier diode is frail with static electricity, and it should be kept in safety from shock of static electricity and static electricity level. Common characteristics chart PT Ta 600 Total power dissipation PT (mW) 400 200 0 0 40 80 120 Ambient temperature Ta (C) 2 SJJ00245CED XN09D57 Characteristics charts of Tr IC VCE Collector-emitter saturation voltage VCE(sat) (V) - 0.20 Ta = 25C IB = -300 A VCE(sat) IC -10 IC / IB = 50 600 hFE IC VCE = -2 V Forward current transfer ratio hFE 500 25C Collector current IC (A) Ta = 75C - 0.16 -250 A -200 A -150 A -100 A -50 A 0 0 -2 -4 -6 -8 -1 Ta = 75C -25C 400 - 0.12 300 -25C - 0.08 - 0.1 25C 200 - 0.04 100 - 0.01 - 0.01 - 0.1 -1 -10 0 - 0.01 - 0.1 -1 -10 Collector-emitter voltage VCE (V) Collector current IC (A) Collector current IC (A) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 100 f = 1 MHz Ta = 25C 10 0 -4 -8 -12 -16 Collector-base voltage VCB (V) Characteristics charts of SBD IF V F 1.2 104 IR Ta VR = 20 V Ct VR 1 000 f = 1 MHz Ta = 25C 0.8 Reverse current IR (mA) Forward current IF (A) Ta = 85C 103 102 Terminal capacitance Ct (pF) 100 25C 0.4 -25C 10 0 1 10 0 20 40 60 80 0 0.4 0.8 1.2 0 10 20 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) SJJ00245CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
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